Electrooptical modulation in multiple quantum well hetero nipi waveguides

Excess carrier lifetime and ambipolar diffusion anisotropy in a nipi-doped In0.2Ga0.8As/GaAs multiple-quantum-well structure

The effects of strain-induced structural defects in a nipi-doped In0.2Ga0.8As/GaAs multiple-quantum well sample were studied with time-resolved electron-beam-induced absorption modulation, in which carrier recombination lifetimes and ambipolar diffusion constants are measured with high spatial, spectral, and temporal resolution. Based on a phenomenological model, carrier lifetimes in the limit ...

Propagation properties of light in AlGaN/GaN quantum-well waveguides

Optical ASK and FSK Modulation By Using Quantum Well Transistor Lasers

In this paper, transistor lasers (TLs) are used as an optical modulator for generation of ASK(Amplitude Shift Keying) and FSK (Frequency Shift Keying) optical signals. Our analysis is based on continuity equation, rate equations, and the theory of discontinuity of quasi-fermi level at the abrupt junction. Our simulation results indicate that, the specification of ASK and FSK optical signals, ar...

Fabrication and optical studies of AlGaN/GaN quantum-well waveguides

Multiple quantum well AlGaAs nanowires.

This letter reports on the growth, structure, and luminescent properties of individual multiple quantum well (MQW) AlGaAs nanowires (NWs). The composition modulations (MQWs) are obtained by alternating the elemental flux of Al and Ga during the molecular beam epitaxy growth of the AlGaAs wire on GaAs (111)B substrates. Transmission electron microscopy and energy dispersive X-ray spectroscopy pe...